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SEMIKRON SKM40GD123D IGBT Transistor Module, High-Power Switching Solutions

Date:2024-10-22Hits:318
  • SEMIKRON SKM40GD123D IGBT Transistor Module, High-Power Switching Solutions




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Brief Function Introduction:


        The SEMIKRON SKM40GD123D IGBT Transistor Module offers high power switching solutions with a maximum collector emitter voltage of 1200V and a continuous collector current of 40A, making it ideal for applications requiring robust performance in harsh environments.


Product Specifications:


Maximum Collector Emitter Voltage: 1200V
Maximum Continuous Collector Current: 40A
Mounting Type: Screw Mount
Pin Count: 12
Dimensions: 105 x 45 x 24mm
Configuration: 3 Phase Bridge
Maximum Gate Emitter Voltage: ±20V
Channel Type: N



Product Details:


    Engineered for superior performance and reliability, the SEMIKRON SKM40GD123D IGBT Transistor Module is designed to withstand the rigors of industrial control systems, ensuring seamless operation under varying environmental conditions.

    This high-voltage, high-current module is an essential component for power conversion and control in applications such as renewable energy systems, motor drives, and industrial automation.

    Featuring a compact screw-mount design, this IGBT module is optimized for efficient heat dissipation and ease of installation, making it suitable for space-constrained applications.

    Built with the latest semiconductor technology, the SKM40GD123D provides unparalleled switching speeds and reduced losses, leading to improved efficiency and longer system lifespans.

    Our engineers have meticulously crafted this module to ensure compatibility with a wide range of control systems, enhancing its versatility across various industries.


Notice:


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